Magazine Article

Flexible, Carbon-Based Ohmic Contacts for Organic Transistors

TBMG-234

11/01/2005

Abstract
Content

A low-temperature process for fabricating flexible, ohmic contacts for use in organic thin-film transistors (OTFTs) has been developed. Typical drainsource contact materials used previously for OTFTs include (1) vacuum deposited noble metal contacts and (2) solution deposited intrinsically conducting molecular or polymeric contacts. Both of these approaches, however, have serious drawbacks.

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Citation
"Flexible, Carbon-Based Ohmic Contacts for Organic Transistors," Mobility Engineering, November 1, 2005.
Additional Details
Publisher
Published
Nov 1, 2005
Product Code
TBMG-234
Content Type
Magazine Article
Language
English