FETs Based on Doped Polyaniline/Polyethylene Oxide Fibers
TBMG-130
06/01/2006
- Content
A family of experimental highly miniaturized field-effect transistors (FETs) is based on exploitation of the electrical properties of nanofibers of polyaniline/ polyethylene oxide (PANi/PEO) doped with camphorsulfonic acid. These polymer-based FETs have the potential for becoming building blocks of relatively inexpensive, low-voltage, high-speed logic circuits that could supplant complementary metal oxide/semiconductor (CMOS) logic circuits.
- Citation
- "FETs Based on Doped Polyaniline/Polyethylene Oxide Fibers," Mobility Engineering, June 1, 2006.