Magazine Article

FETs Based on Doped Polyaniline/Polyethylene Oxide Fibers

TBMG-130

06/01/2006

Abstract
Content

A family of experimental highly miniaturized field-effect transistors (FETs) is based on exploitation of the electrical properties of nanofibers of polyaniline/ polyethylene oxide (PANi/PEO) doped with camphorsulfonic acid. These polymer-based FETs have the potential for becoming building blocks of relatively inexpensive, low-voltage, high-speed logic circuits that could supplant complementary metal oxide/semiconductor (CMOS) logic circuits.

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Citation
"FETs Based on Doped Polyaniline/Polyethylene Oxide Fibers," Mobility Engineering, June 1, 2006.
Additional Details
Publisher
Published
Jun 1, 2006
Product Code
TBMG-130
Content Type
Magazine Article
Language
English