Double-Sided Si(Ge)/Sapphire/III-Nitride Hybrid Structures

NASA Langley Research Center has developed a double-sided Si(Ge)/ Sapphire/III-Nitride hybrid structure. This technology uses both sides of a sapphire wafer to build device structures — on one side, making either Si or SiGe devices and on the other side, making III-Nitride device structures (e.g. GaN, InGaN, AlGaN).