TBMG-171: Doping-Induced Interband Gain in InAs/AlSb Quantum Wells - Magazine Article

Abstract

Content: A paper describes a computational study of effects of doping in a quantum well (QW) comprising a 10-nm-thick layer of InAs sandwiched between two 21-nm-thick AlSb layers.

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Topics: Research and development

Details

Citation: "Doping-Induced Interband Gain in InAs/AlSb Quantum Wells," Mobility Engineering, January 1, 2005.

Additional Details

Publisher: Tech Briefs Media Group

Published: Jan 1, 2005

Product Code: TBMG-171

Content Type: Magazine Article

Language: English