Development of High Quality 4H-SiC Thick Epitaxy for Reliable High Power Electronics Using Halogenated Precursors

New approaches to synthesizing SiC epitaxial layers could improve electronics performance.

Office of Naval Research, Arlington, Virginia

Development of robust semiconductor devices with high energy efficiency and reliability is a key objective towards ‘Energy Conversion and Power Management’ for naval system applications. The goal of this research is to create the fundamental knowledge needed for the development of novel approaches to synthesize high-quality, thick SiC epitaxial layers (> 100μm) for reliable high voltage (≥10kV) / high power (>100 kW) electronics for navy ship applications.

This program focuses on (a) developing innovative solutions to the current main limitation in SiC homoepitaxy - reduction/elimination of device-killing defects; (b) gaining understanding of the chemical vapor deposition processes in SiC epitaxy, specifically related to precursor gas decomposition dynamics and subsequent parasitic deposition of Si, C and SiC on the gas injector tube walls; and (c) achieving both high growth rate and high quality epitaxial films in a cost-effective manner.