Development of GaN-Based Nanostructure Photon Emitters

Gallium nitride (GaN)-based wide bandgap semiconductors are very important material systems for fabrication of photon emitters in a wide range of wavelengths. In particular, the light emitters in ultraviolet (UV), blue, and green wavelengths have been developed and demonstrated in recent years. Besides these UV and visible light emitters, the unique properties of a GaN material system such as large exciton energy and large LO phonon energy, have been proposed as a very suitable material candidate for realization of various photon emitters such as single-photon emitters, LEDs, vertical cavity surface emitting lasers (VCSELs), and quantum cascade lasers (QCL) at room temperature.