Magazine Article

Development of GaN-Based Nanostructure Photon Emitters

TBMG-8014

06/01/2010

Abstract
Content

Gallium nitride (GaN)-based wide bandgap semiconductors are very important material systems for fabrication of photon emitters in a wide range of wavelengths. In particular, the light emitters in ultraviolet (UV), blue, and green wavelengths have been developed and demonstrated in recent years. Besides these UV and visible light emitters, the unique properties of a GaN material system such as large exciton energy and large LO phonon energy, have been proposed as a very suitable material candidate for realization of various photon emitters such as single-photon emitters, LEDs, vertical cavity surface emitting lasers (VCSELs), and quantum cascade lasers (QCL) at room temperature.

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Citation
"Development of GaN-Based Nanostructure Photon Emitters," Mobility Engineering, June 1, 2010.
Additional Details
Publisher
Published
Jun 1, 2010
Product Code
TBMG-8014
Content Type
Magazine Article
Language
English