Detector Module for Testing Silicon Carbide Semiconductor Devices

Long-term stress testing of silicon carbide (SiC) semiconductor devices is required to determine suitability for power electronics applications. During testing, preventable catastrophic failures can occur due to drift in steady-state operation or transients that shift the device outside of its safe operating range. Both steady-state and transient drift are easily monitored values including temperature, on-state resistance, voltage, and current, as well as others. By measuring and reacting to shifts in these values, device damage can be minimized.