Magazine Article

Design and Fabrication of High-Efficiency CMOS/CCD Imagers

TBMG-13450

12/01/2007

Abstract
Content

An architecture for back-illuminated complementary metal oxide/semiconductor (CMOS) and charge-coupled-device (CCD) ultraviolet/visible/near infrared-light image sensors, and a method of fabrication to implement the architecture, are undergoing development. The architecture and method are expected to enable realization of the full potential of back-illuminated CMOS/CCD imagers to perform with high efficiency, high sensitivity, excellent angular response, and in-pixel signal processing. The architecture and method are compatible with next-generation CMOS dielectric-forming and metallization techniques, and the process flow of the method is compatible with process flows typical of the manufacture of very-large-scale integrated (VLSI) circuits.

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Citation
"Design and Fabrication of High-Efficiency CMOS/CCD Imagers," Mobility Engineering, December 1, 2007.
Additional Details
Publisher
Published
Dec 1, 2007
Product Code
TBMG-13450
Content Type
Magazine Article
Language
English