Channel Field Effect Transistors

Narrow bandgap semiconductors offer high carrier mobilities and low contact resistances, while wide bandgap semiconductors offer high breakdown voltages. A series of heterojunction transistors has been investigated and proved to be effective for improving both speed and power output. These devices include double heterostructure InP/InGaAs/InP bipolar transistors and composite-channel InAlAs/InGaAs/lnP/InAlAs high-electron-mobility transistors (HEMTs), which have taken full advantage of the matched lattice constant (or pseudomorphic growth).