Broadband 1.2- and 2.4-mm Gallium Nitride (GaN) Power Amplifier Designs

The US Army Research Laboratory (ARL) has been working with Raytheon to design efficient, broadband, linear, highpower amplifiers and robust, broadband, low-noise amplifiers for future adaptive, multimodal radar systems. Raytheon has a high-performance, W-band, gallium nitride (GaN) fabrication process and a process design kit (PDK) that ARL used to design low-noise amplifiers, power amplifiers, and other circuits for future radar, communications, and sensor systems. After the first set of ARL and Raytheon designs was submitted for fabrication, test designs of broadband Class A/B power amplifiers were developed. While these designs did not get fabricated in the initial effort, they serve to demonstrate the performance, bandwidth, and capability of this GaN process and could potentially be fabricated in the future.