AlInGaN Bandgap and Doping Engineering for Visible Laser Diodes

TBMG-8562

10/01/2010

Abstract
Content

There is a great need to develop chip-scale visible lasers for many applications, including laser sight, environmental monitoring, and compact pumping sources for ultra-short laser pulse generation, high-luminous full-color displays, new-generation solid-state lighting, etc. The realization of chip-scale visible laser diodes (LDs) would provide significant benefits in terms of cost, volume, and the ability of photonic integration with other functional devices. Significant progress in nitride material technology has been achieved, and high-performance visible LEDs and near-UV LDs based on InGaN are now commercially available.

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Citation
"AlInGaN Bandgap and Doping Engineering for Visible Laser Diodes," Mobility Engineering, October 1, 2010.
Additional Details
Publisher
Published
Oct 1, 2010
Product Code
TBMG-8562
Content Type
Magazine Article
Language
English