Addendum of Self-Aligned Ion Implant to Design and Processing of SiC High-Temperature Transistors for Durable Operation Above 400 °C

Researchers at NASA’s Glenn Research Center have developed a revolutionary new generation of silicon carbide (SiC) integrated circuit (IC) chips, setting an unprecedented benchmark in the field of high-temperature electronics. In the past, SiC ICs could not withstand more than a few hours of 500 °C temperatures before degrading or failing. Now, Glenn has successfully fabricated prototype chips that can exceed 10,000 hours of continuous operation at 500 °C. The advanced performance stems in part from the development of Glenn’s patented iridium interfacial stack (IrIS), a bondable metallization stack that prevents diffusion of oxygen and gold into silicon carbide (SiC) integrated circuits operating above 500 °C. The enhanced reliability of these components (and the transistors and logic boards they support) will enable important improvements in the control and operation of combustion engines, well-drilling, and other harsh environment systems, thereby greatly impacting operational efficiency and environmental quality. This advance in the manufacture of SiC-based electronics also fundamentally revolutionizes the opportunities for intelligent systems operating in high-temperature environments.