A Reactive-Ion Etch for Patterning Piezoelectric Thin Film

TBMG-972

01/01/2003

Abstract
Content

Reactive-ion etching (RIE) under conditions described below has been found to be a suitable means for patterning piezoelectric thin films made from such materials as PbZr1-xTixO3 or BaxSr1-xTiO3. In the original application for which this particular RIE process was developed, PbZr1-xTixO3 films 0.5 μm thick are to be sandwiched between Pt electrode layers 0.1 µm thick and Ir electrode layers 0.1 μm thick to form piezoelectric capacitor structures. Such structures are typical of piezoelectric actuators in advanced microelectromechanical systems now under development or planned to be developed in the near future.

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Citation
"A Reactive-Ion Etch for Patterning Piezoelectric Thin Film," Mobility Engineering, January 1, 2003.
Additional Details
Publisher
Published
Jan 1, 2003
Product Code
TBMG-972
Content Type
Magazine Article
Language
English