A Modular Apparatus and Method for Attaching Multiple Devices

Scientists at NASA's Glenn Research Center have received several patents for fabrication methods that speed the production of silicon carbide (SiC) sensors and electronics, reduce fabrication costs, and enable advanced semiconductor functionality at temperatures greater than 600 °C. Glenn has developed a method for fabricating ultra-thin SiC microstructures using a dopant selective reactive ion etching (DSRIE) technique that can create extremely thin diaphragms (approximately 2 microns), increasing sensor sensitivity and resolution. In addition, Glenn has developed a modular protective packaging that allows SiC-based electronic devices to survive and operate reliably at very high temperatures. These innovations improve the real-time monitoring of high-temperature harsh environments, such as jet and rocket engines, allowing faster response times and more accurate readings.