338-GHz Semiconductor Amplifier Module

A 35-nm-gate-length InP, high-electron-mobility transistor (HEMT) with a high-indium-content channel as the key component was developed to produce an MMIC (monolithic microwave integrated circuit) power amplifier. With a shorter gate length than previous transistor generations, it allows for electrons to travel shorter distances. This results in higher frequency functionality. In addition, the fabrication process provides for a comprehensive passive component library of resistors, capacitors, airbridge wiring, and through-wafer vias that allow for transistor RF matching and power combining on-chip, making the measured 10-mW 338-GHz chip possible.