Magazine Article

Bump Bonding Using Metal-Coated Carbon Nanotubes

TBMG-13255

04/01/2012

Abstract
Content

Bump bonding hybridization techniques use arrays of indium bumps to electrically and mechanically join two chips together. Surface-tension issues limit bump sizes to roughly as wide as they are high. Pitches are limited to 50 microns with bumps only 8–14 microns high on each wafer. A new process uses oriented carbon nanotubes (CNTs) with a metal (indium) in a wicking process using capillary actions to increase the aspect ratio and pitch density of the connections for bump bonding hybridizations. It merges the properties of the CNTs and the metal bumps, providing enhanced material performance parameters.

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Citation
"Bump Bonding Using Metal-Coated Carbon Nanotubes," Mobility Engineering, April 1, 2012.
Additional Details
Publisher
Published
Apr 1, 2012
Product Code
TBMG-13255
Content Type
Magazine Article
Language
English