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Discrete Solid-State Devices
ISSN: 0148-7191, e-ISSN: 2688-3627
Published February 01, 1974 by SAE International in United States
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A fundamental knowledge of solid-state physics is used to gain understanding of the two basic active solidstate devices-bipolar and field-effect transistors. The bipolar transistor is treated as two junctions communicating through a common region (the base). The functions of charge injection and collection are studied and developed to explain the observed static (d-c) volt-ampere characteristics. Major bipolar-transistor parameters are then reviewed. Finally, the limitations in gain, voltage, and power are discussed. There are basically two forms of field-effect transistors: the junction field effect transistor (JFET) and the metal oxide semiconductor (MOS). Both forms use a voltage applied to a gate electrode or region to control charge (current) flow between source and drain terminals. This action is studied and used to to develop the observed state (d-c) volt-ampere characteristic. The major field-effect transistor parameters are then reviewed. Finally, the limitations in gain, voltage, and power are discussed. Included in the appendixes is a brief review of transistor evolution, which serves as an introduction to device processing information, and an introduction to some of the lesser known solid-state devices. A third appendix explains thermal resistance.
CitationOlmstead, J., "Discrete Solid-State Devices," SAE Technical Paper 740010, 1974, https://doi.org/10.4271/740010.
- 1974 RCA Solid State Databooks: (a) SSD-201B Linear Integrated Circuits and MOS Devices (Data). (b)SSD-202B Linear Integrated Circuits and MOS Devices (Application Notes). (c)SSD-203B COS/MOS Digital Integrated Circuits. (d)SSD-204B Power Transistors and Power Hybrid Circuits. (e)SSD-205B RF Power Devices. (f)SSD-207B High-Reliability Devices.
- RCA, “Fundamentals of Transistors-A Programmed Text.” Englewood Cliffs, N.J.: Prentice Hall, 1965.
- Morant M. J., “Introduction to Semiconductor Devices.” Engineering Science Monographs, Reading, Mass.: Addison-Wesley, 1964.
- Camenzind Hans R., “Circuit Design for Integrated Electronics.” Reading, Mass.: Addison-Wesley, 1968.
- Grove A. S., “Physics and Technology of Semiconductor Devices.” New York: John Wiley and Sons, Inc., 1967.
- General Electric Co., Semiconductor Products Dept., “General Electric Transistor Manual.” Syracuse, New York: General Electric Co., 1973.