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Discrete Solid-State Devices
ISSN: 0148-7191, e-ISSN: 2688-3627
Published February 01, 1974 by SAE International in United States
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A fundamental knowledge of solid-state physics is used to gain understanding of the two basic active solidstate devices-bipolar and field-effect transistors. The bipolar transistor is treated as two junctions communicating through a common region (the base). The functions of charge injection and collection are studied and developed to explain the observed static (d-c) volt-ampere characteristics. Major bipolar-transistor parameters are then reviewed. Finally, the limitations in gain, voltage, and power are discussed. There are basically two forms of field-effect transistors: the junction field effect transistor (JFET) and the metal oxide semiconductor (MOS). Both forms use a voltage applied to a gate electrode or region to control charge (current) flow between source and drain terminals. This action is studied and used to to develop the observed state (d-c) volt-ampere characteristic. The major field-effect transistor parameters are then reviewed. Finally, the limitations in gain, voltage, and power are discussed. Included in the appendixes is a brief review of transistor evolution, which serves as an introduction to device processing information, and an introduction to some of the lesser known solid-state devices. A third appendix explains thermal resistance.
CitationOlmstead, J., "Discrete Solid-State Devices," SAE Technical Paper 740010, 1974, https://doi.org/10.4271/740010.
- 1974 RCA Solid State Databooks SSD-201B Linear Integrated Circuits and MOS Devices (Data) (b) SSD-202B Linear Integrated Circuits and MOS Devices (Application Notes) (c) SSD-203B COS/MOS Digital Integrated Circuits (d) SSD-204B Power Transistors and Power Hybrid Circuits (e) SSD-205B RF Power Devices (f) SSD-207B High-Reliability Devices
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- Morant M. J. “Introduction to Semiconductor Devices.” Engineering Science Monographs Reading, Mass. Addison-Wesley 1964
- Camenzind Hans R. “Circuit Design for Integrated Electronics.” Reading, Mass. Addison-Wesley 1968
- Grove A. S. “Physics and Technology of Semiconductor Devices.” New York John Wiley and Sons, Inc. 1967
- General Electric Co., Semiconductor Products Dept. “General Electric Transistor Manual.” Syracuse, New York General Electric Co. 1973