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Automotive MOSFETs Operating in the Safe Operating Area
ISSN: 0148-7191, e-ISSN: 2688-3627
Published April 14, 2015 by SAE International in United States
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The modern day power MOSFET is constructed using the latest technology in order to minimize the drain source resistance. The latest MOSFET technologies are capable of achieving the same drain to source resistance with a smaller MOSFET die than previous generations which will directly lead to increased thermal resistance and limited energy handling capability. This paper will discuss the Safe Operating Area of power MOSFETs and how to assess new MOSFET technology.
CitationPuerschel, M., Kiep, A., and Spielman, C., "Automotive MOSFETs Operating in the Safe Operating Area," SAE Technical Paper 2015-01-0263, 2015, https://doi.org/10.4271/2015-01-0263.
- Kiep, A. and Puerschel, M., “Spontaneous Transistor Failures in Automotive Power Electronics,” SAE Technical Paper 2014-01-0228, 2014, doi:10.4271/2014-01-0228.