This content is not included in
your SAE MOBILUS subscription, or you are not logged in.
Reliability of SiC-MOSFET for Hybrid Vehicle
Technical Paper
2012-01-0337
ISSN: 0148-7191, e-ISSN: 2688-3627
Annotation ability available
Sector:
Language:
English
Abstract
This paper describes the reliability of silicon carbide (SiC) MOSFET. We clarified the relation between the lifetime of the gate oxide and the crystal defects. We fabricated MOS diodes using thermal oxidation and measured their lifetimes by TDDB (Time Dependent Dielectric Breakdown) measurement. The wear-out lifetime is sufficient for hybrid vehicle but many MOS diodes broke in shorter time. The breakdown points were defined by Photo-emission method. Finally, we classified the defects by TEM (Transmission Electron Microscopy). A TSD (Threading Screw Dislocation) plays the most important role in the lifetime degradation of the gate oxide. The lifetime of the gate oxide area, in which a TSD is included, is shorter by two orders of magnitude than a wear-out breakdown. The mechanism by which threading dislocations degrade the gate oxide lifetime was not discovered. To explain the degradation, we assumed two models, the shape effect and the oxide quality degradation.
Recommended Content
Technical Paper | The Growing Need for Recycling within the Automatic Transmission Filter Market |
Ground Vehicle Standard | Rectangular Cross Section Polymeric Sealing Rings |
Technical Paper | Critical Engine Geometry Generation for Rapid Powertrain Concept Design Assessment |
Authors
Citation
Matsuki, H., Yamamoto, K., Nagaya, M., Watanabe, H. et al., "Reliability of SiC-MOSFET for Hybrid Vehicle," SAE Technical Paper 2012-01-0337, 2012, https://doi.org/10.4271/2012-01-0337.Also In
References
- Senzaki, J. Kojima, K. Kato, T. Shimozato, A. Fukuda, K. Appl. Phys. Lett. 89 022909 2006
- Nakamura, D. et al. Nature 430 2004 1009