This content is not included in
your SAE MOBILUS subscription, or you are not logged in.
High Temperature, High Frequency SiC Three Phase Inverter for Aircraft Applications
Technical Paper
2010-01-1798
ISSN: 0148-7191, e-ISSN: 2688-3627
Annotation ability available
Sector:
Event:
Power Systems Conference
Language:
English
Abstract
This paper presents the results of a silicon-carbide-based 300V
5 kW fully functional three-phase inverter module operating at high
temperatures and device junctions up to 200°C. Each phase power
module employs eight SemiSouth 100 mΩ/1200V SiC JFETs (SJEP120R100)
in parallel per switch position. The paper will highlight both the
electrical and the thermo-mechanical design. Experimental results
validating the overall design will also be discussed.
The core of the electrical design was to take advantage of the
low input capacitance, high switching frequency (50 kHz) and high
temperature capability of the SiC JFET in order to obtain a high
power density inverter. Since SemiSouth's SiC JFET is a
relatively new device, computer models are not currently available
from the manufacturer, which presents a hurdle during the design
stage. In order to produce reliable performance predictions, the
team has focused on developing a model for the SiC JFETs ultimately
used. This paper will cover some of the strategies used to
implement a first degree approximation model for the SiC devices.
Since enhancement-mode SiC power JFETs (such as the ones used in
the prototype) have a gate behavior different from that of
traditional MOSFET-type devices, this paper will also present the
gate driver strategy and ultimate gate driver hardware prototype
developed to properly drive the enhancement mode SiC JFETs.
Packaging topics covered include material selection, high
temperature processing issues, power substrate design, and system
thermal analysis. Concluding the paper are the high temperature
electrical test results of the prototype system.
Recommended Content
| Technical Paper | Practical Hybrid Contactors |
| Technical Paper | Advanced Control Strategy for Solid State Power Controllers (SSPC) |
| Technical Paper | Realistic Driving Experience of New Vehicle Concepts on the BMW Ride Simulator |
Authors
Citation
Cilio, E., Mitchell, G., Lostetter, A., Schupbach, R. et al., "High Temperature, High Frequency SiC Three Phase Inverter for Aircraft Applications," SAE Technical Paper 2010-01-1798, 2010, https://doi.org/10.4271/2010-01-1798.Also In
References
- Palmour, J.W. Singh, R. Glass, R.C. Kordina, O. Carter, C.H. Jr “Silicon Carbide for Power Devices” IEEE Symposium on Power Semiconductor Devices and ICs 1997
- Funaki, T. Balda, J.C. Junghans, J. Kashyap, A.S. Mantooth, H.A. Barlow, F. Kimoto, T. Hikihara, T. “Power Conversion with SiC Devices at Extremely High Ambient Temperatures” IEEE Transactions on Power Electronics 22 4 July 2007
- http://semisouth.com/products/uploads/DS_SJEP120R100_rev1%202.pdf
- Kelley, R. Ritenour, A. Sheridan, D. Casady, J. “Improved two-stage DC-coupled gate driver for enhancement-mode SiC JFET” Applied Power Electronics Conference and Exposition (APEC), 2010 Twenty-Fifth Annual IEEE Publication Year 2010 1838 1841