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Using Datasheet Information to Predict the Power Dissipation of a Hybrid Silicon Carbide IGBT Module in a Voltage Source Inverter
Technical Paper
2008-01-2913
ISSN: 0148-7191, e-ISSN: 2688-3627
Annotation ability available
Sector:
Event:
Power Systems Conference
Language:
English
Abstract
In this paper a method of predicting the power dissipation in a hybrid Silicon Carbide IGBT power module using primarily the information available from the datasheet is shown. Mathematical modeling of the switching device is accomplished using MathCAD for the purpose of power dissipation calculation. The power dissipated is calculated on a pulse-by-pulse basis to allow for any arbitrary waveform to be studied. The mathematical model is validated by way of comparing the results with the power dissipation results calculated by manufacturer's proprietary software.
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Authors
Citation
Lloyd, S. and Morcov, N., "Using Datasheet Information to Predict the Power Dissipation of a Hybrid Silicon Carbide IGBT Module in a Voltage Source Inverter," SAE Technical Paper 2008-01-2913, 2008, https://doi.org/10.4271/2008-01-2913.Also In
References
- IPOSIM Simulation Tool version 6.1, Infineon Technologies http://www.infineon.com
- Power Module Loss Simulator Ver. 4.02, Mitsubishi Electric https://www3.mitsubishichips.com/dm/bin/u_als_form_e.pl
- “Calculation of Major IGBT Operating Parameters,” Infineon Technologies August 1999
- Marckx D.A. “Breakthrough in Power Electronics from SiC,” Peregrine Power LLC Wilsonville, Oregon March 2006