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250 °C SiC Power Module Package Design
ISSN: 0148-7191, e-ISSN: 2688-3627
Published November 11, 2008 by SAE International in United States
Annotation ability available
Event: Power Systems Conference
In order to take full advantage of SiC, a high temperature package for power module using SiC devices was designed, developed, fabricated and tested. The details of the material selection and fabrication process are described. High temperature reliability test and power test shows that the package presented in this paper can perform well at the high junction temperature.
- Puqi Ning - Virginia Polytechnic Institute and State University
- Rixin Lai - Virginia Polytechnic Institute and State University
- Daniel Huff - Virginia Polytechnic Institute and State University
- Fred Wang - Virginia Polytechnic Institute and State University
- Khai D. T. Ngo - Virginia Polytechnic Institute and State University
CitationNing, P., Lai, R., Huff, D., Wang, F. et al., "250 °C SiC Power Module Package Design," SAE Technical Paper 2008-01-2892, 2008, https://doi.org/10.4271/2008-01-2892.
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