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Analysis of Avalanche Behaviour for Paralleled MOSFETs
Technical Paper
2004-01-1595
ISSN: 0148-7191, e-ISSN: 2688-3627
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Language:
English
Abstract
In this study, an avalanche extension to existing quasi-dynamic thermal model is developed. And the current and thermal distribution among paralleled devices under avalanche condition is investigated. The statistic distribution of breakdown voltage, terminal stray inductance and thermal coupling all affect final electrical and thermal balance of paralleled devices. Without careful design consideration, it may cause reliability problem. So conclusions in this paper could provide useful guidelines for high power discrete or module applications with paralleled power devices.
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Authors
Citation
Chen, J., Downer, S., Murray, A., and Divins, D., "Analysis of Avalanche Behaviour for Paralleled MOSFETs," SAE Technical Paper 2004-01-1595, 2004, https://doi.org/10.4271/2004-01-1595.Also In
In-Vehicle Networks and Software, Electrical Wiring Harnesses, and Electronics and Systems Reliability
Number: SP-1852; Published: 2004-03-08
Number: SP-1852; Published: 2004-03-08
References
- www.irf.com
- Bach James C. “Development of an Electro-Thermal Power MOSFET Macro-Model” Saber Asssure2000 users conference May 10–12 2000