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Impact of SiC Power Electronic Devices for Hybrid Electric Vehicles
Technical Paper
2002-01-1904
ISSN: 0148-7191, e-ISSN: 2688-3627
Annotation ability available
Sector:
Event:
Future Car Congress
Language:
English
Abstract
The superior properties of silicon carbide (SiC) power electronic devices compared with silicon (Si) are expected to have a significant impact on next-generation vehicles, especially hybrid electric vehicles (HEVs). The system-level benefits of using SiC devices in HEVs include a large reduction in the size, weight, and cost of the power conditioning and/or thermal systems. However, the expected performance characteristics of the various semiconductor devices and the impact that these devices could have in applications are not well understood. Simulation tools have been developed and are demonstrated for SiC devices in relevant transportation applications. These tools have been verified by experimental analysis of SiC diodes and MOSFETs and can be used to assess the impact of expected performance gains in SiC devices and determine areas of greatest impact in HEV systems.
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Citation
Tolbert, L., Ozpineci, B., Islam, S., and Peng, F., "Impact of SiC Power Electronic Devices for Hybrid Electric Vehicles," SAE Technical Paper 2002-01-1904, 2002, https://doi.org/10.4271/2002-01-1904.Also In
SAE 2002 Transactions Journal of Passenger Cars - Electronic and Electrical Systems
Number: V111-7; Published: 2003-09-15
Number: V111-7; Published: 2003-09-15
References
- Bhatnagar M. Baliga B. J. “Comparison of 6H-SiC, 3C-SiC, and Si for power devices,” IEEE Transactions on Electron Devices 40 3 645 655 March 1993
- Shenai K. Scott R. S. Baliga B. J. “Optimum semiconductors for high-power electronics,” IEEE Transactions on Electron Devices 43 9 1811 1823 Sept. 1989
- Elasser A Kheraluwala M. Ghezzo M. Steigerwald R. Krishnamurthy N. Kretchmer J. Chow T. P. “A comparative evaluation of new silicon carbide diodes and state-of-the-art silicon diodes for power electronic applications,” IEEE IAS Annual Meeting Conference Proceedings 341 345 1999
- Ozpineci B. Tolbert L. M. Islam S. K. Hasanuzzaman M. “Effects of silicon carbide (SiC) power devices on HEV PWM inverter losses” The Annual Conference of the IEEE Industrial Electronics Society (IECON'01) 1187 1192 2001
- Huang Q. Zhang B. “Comparing SiC switching power devices: MOSFET, NPN transistor and GTO transistor,” Solid State Electronics Pergamon Press 325 340 2000
- http://www.infineon.com/cgi/ecrm.dll/ecrm/scripts/prod_cat.jsp?oid=-8681
- Mohan N. Undeland T. M. Robbins W. P. Power Electronics 2nd John Wiley & Sons New York 1995
- Schroeder D. Semiconductor Material and Device Characterization John Wiley & Sons New York 1990
- Johnson C.M. Wright N.G. Ortolland S. Morrison D. Adachi K. O'Neill A. “Silicon carbide power devices: hopeful or hopeless?” IEE Colloquium on Recent Advances in Power Devices 10/1 10/5 1999
- Ragunathan R. Alok D. Baliga B.J. “High Voltage 4H-SiC Schottky Diodes” IEEE Electron Device Letters 16 6 226 227 June 1995
- Itoh Kimoto T. Matsunami H. “High performance of high-voltage 4H-SiC Schottky barrier diodes” IEEE Electron Device Letters 16 6 280 282 June 1995
- Wright W. Carter J. Alexandrov P. Pan M. Weiner M. Zhao J.H. “Comparison of Si and SiC diodes during operation in three-phase inverter driving an AC induction motor” IEE Electronics Letters 37 12 June 2001
- Dufrene J.B. Carter G. Casady J.B. Sankin I. Sheridan D.C. Draper W. Mazzola M. “High-voltage (600 to 3 kV) silicon carbide diode development” IEEE APEC 2001 1253 1257 Anaheim 2001
- Hefner, A.R. Jr. Singh R. Lai Jih-Sheng Berning D.W. Bouche S. Chapuy C. “SiC power diodes provide breakthrough performance for a wide range of applications” IEEE Transactions on Power Electronics 16 2 273 280 March 2001
- Hefner A.R. Berning D. Lai J. S. Liu C. Singh R. Kamgaing T. Bernstein J. “Silicon carbide merged PiN schottky diode switching characteristics and evaluation for power supply applications, ” IEEE IAS Annual Meeting Conf Proc. 2948 2954 2000
- Berringer K. Marvin J. Perruchoud P. “Semiconductor power losses in ac inverters,” IEEE IAS Annual Meeting Conf Proc. 882 888 1995