This content is not included in
your SAE MOBILUS subscription, or you are not logged in.
High Power Diamond Switches for MEA Applications
Technical Paper
1999-01-1398
ISSN: 0148-7191, e-ISSN: 2688-3627
Annotation ability available
Sector:
Language:
English
Abstract
Electronic components including switches that can operate at elevated temperatures in excess of 200 °C are under development for applications such as the More Electric Aircraft. SiC is utilized to build high temperature switches, but limitations in fabrication techniques have stunted the development of SiC based devices. Other wide band gap materials such as diamond offer the promise of meeting the high temperature requirements. A new class of high voltage, high power, high temperature diamond switches was developed under a Phase II STTR program from the US Air Force. A 1000 V, 156 A diamond switch was operated at temperatures up to 375 °C to demonstrate the validity of these switches for More Electric Aircraft applications. Designs for a practical switch were completed. Such a 1000 V/1000 A diamond switch operating at 400 °C would have a <5 V forward voltage drop.
Authors
Citation
Prasad, R., Gensler, S., Qi, N., Krishnan, M. et al., "High Power Diamond Switches for MEA Applications," SAE Technical Paper 1999-01-1398, 1999, https://doi.org/10.4271/1999-01-1398.Also In
References
- Quigley, R. E. Jr More Electric Aircraft, Proc. IEEE, 8th Annual Applied Power Electronics Conference 19 March 1993 San Diego, CA 906 1993 Society of Automotive Engineering Aerospace Atlantic 1993 Dayton OH
- Cloyd, J. S. Level III Technology Performance Objectives for the More Electric Aircraft, Memo. Dated Nov. 1, 1996 from the USAF Wright Laboratory WL/POOX
- Weimer, J. A. Electrical Power Technology for the More Electric Aircraft, Proc. 1993 IEEE/AIAA 12th Digital Avionics Systems Conf. Fort Worth, TX 1993 445 1993
- Reinhardt, K. C. Marciniak, M. Wide-Bandgap Power Electronics for the More Electric Aircraft (MEA), in the Proceedings of the Third International High Temperature Conference Albuquerque, NM June 10- 14 1996
- Hingorani N. G. Stahlkopf, K. E. High-Power Electronics, Scientific American 269 78 85 1993
- Bhatnagar M. Baliga, B. J. Comparison of 6H-SiC, 3C-SiC, and Si for Power Devices, IEEE Transactions on Electron Devices 40 645 655 1993
- Baliga, B. J. Power Semiconductor Devices for Variable-Frequency Drives, Proceedings of the IEEE 82 1112 1122 1994
- Trew, R. J. Yan, J.-B. Mock, P. M. The Potential of Diamond and SiC Electronic Devices for Microwave and Millimeter-Wave Power Applications, Proceedings of the IEEE 79 598 620 1991
- Davis, R. F. Kelner, G. Shur, M. Palmour, J. W. Edmond, J. A. Thin Film Deposition and Microelectronic and Optoelectronic Device Fabrication and Characterization in Monocrystalline Alpha and Beta Silicon Carbide, Proceedings of the IEEE 79 677 701 1991
- Spencer, M. G. Devaty, R. P. Edmond, J. A. Khan, M. A. Kaplan, R. Rahman, M. Chapter 6: Devices Proceedings of the Fifth International Conference Bristol, United Kingdom IOP Publishing 1994 465 690
- King D. B. Thome, F. V. Sessions X & XI, presented at Trans. 2nd. Int. High Temperature Electronics Conf. Charlotte, NC 1994
- Powell, J. A. Larkin, D. J. Neudeck, P. G. Yang, J. W. Pirouz, P. Institute of Physics Conference Series, no. 137, Silicon Carbide and Related Materials: Proc. 5th Intl. Conf. Spencer, M. G. Devaty, R. P. Edmond, J. A. Kahn, M. A. Kaplan, R. Rahman, M. Bristol, United Kingdom IOP Publishing 1994 161 164
- Neudeck, P. G. Progress in Silicon Carbide semiconductor electronics technology, J. Electronic Materials 24 4 238 1995
- Palmour, J. W. Tsvetkov, V. F. Lipkin, L. A. Carter, C. H. Jr Silicon Carbide Substrates and Power Devices Proceedings of the 21st International Symposium on Compound Semiconductors Bristol, UK: IOP Publishing 1994
- Palmour, J. W. Singh, R. Lipkin L. A. White, D. G. 3rd Intl. High Temp. Elect. Conf. Albuquerque, NM 2 XVI 9 1996
- Neudeck P. G. Powell, J. A. Performance Limiting Micropipe Defects in Silicon Carbide Wafers, IEEE Electron Device Letters 15 63 65 1994
- Pan, L. S. Han, S. Kania, D. R. Plano M. A. Landstrass, M. I. Diamond Rel. Matl. 2 820 1993
- Scarpetti R. D. Jr. Hofer, W. W. Kania, D. R. Schoenbach, K. H. Joshi, R. P. Molina, C. Brink-mann, R. P. High-Power, Electron Beam-Induced Switching in Diamond, Engineering Research Development and Technology, Thrust Area Report FY93, Lawrence Livermore National Laboratory 31 1993
- Lin S-H. Sverdrup, L. H. Electron beam activated diamond devices Proc. Appl. Diamond Films Rel. Matl.: 3rd Intl. Conf Feldman, A. Pzeng, Y. Yarbrough, W. A. Yoshakawa M. Murakawa, N. NIST Special Publication 885 79 82 1995
- Prasad, R. R. Rondeau G. Loubriel, G. M. High temperature diamond switches for the more electric aircraft, Phase I STTR final report, USAF Wright Laboratories Tech. Memo. # WL-TR-96-2050 1996