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A Comprehensive Analytical Switching Transients and Loss Modeling Approach with Accurate Parasitic Parameters for Enhancement-Mode Gallium Nitride Transistors

Journal Article
14-11-01-0010
ISSN: 2691-3747, e-ISSN: 2691-3755
DOI: https://doi.org/10.4271/14-11-01-0010
Published September 27, 2021 by SAE International in United States
A Comprehensive Analytical Switching Transients and Loss Modeling Approach with Accurate Parasitic Parameters for Enhancement-Mode Gallium Nitride Transistors
Sector:
Citation: Tian, J., Lai, C., Luo, Y., Turco, S. et al., "A Comprehensive Analytical Switching Transients and Loss Modeling Approach with Accurate Parasitic Parameters for Enhancement-Mode Gallium Nitride Transistors," SAE Int. J. Elec. Veh. 11(1):133-146, 2022, https://doi.org/10.4271/14-11-01-0010.
Language: English

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