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A Comprehensive Analytical Switching Transients and Loss Modeling Approach with Accurate Parasitic Parameters for Enhancement-Mode Gallium Nitride Transistors
- James Tian - University of Windsor, Canada ,
- Chunyan Lai - Concordia University, Canada ,
- Yang Luo - Concordia University, Canada ,
- Steven Turco - University of Windsor, Canada ,
- Sivanagaraju Gangavarapu - University of Windsor, Canada ,
- Philip Korta - Magna International Inc., USA ,
- Lakshmi Varaha Iyer - Magna International Inc., USA ,
- Narayan Kar - University of Windsor, Canada ,
- VenkataRatnam Vakacharla - University of Windsor, Canada
Journal Article
14-11-01-0010
ISSN: 2691-3747, e-ISSN: 2691-3755
Sector:
Citation:
Tian, J., Lai, C., Luo, Y., Turco, S. et al., "A Comprehensive Analytical Switching Transients and Loss Modeling Approach with Accurate Parasitic Parameters for Enhancement-Mode Gallium Nitride Transistors," SAE Int. J. Elec. Veh. 11(1):133-146, 2022, https://doi.org/10.4271/14-11-01-0010.
Language:
English
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