Graphene Field Effect Transistors for Radiation Detection (GFET-RS)

  • Magazine Article
  • TBMG-35148
Published September 01, 2019 by Tech Briefs Media Group in United States
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Language:
  • English

NASA Goddard Space Flight Center developed novel transistor technology based on a single graphene layer coupled to a radiation absorber substrate. Unlike conventional charge-sensing detectors, the GFET-RS utilizes the sensitive dependence of graphene conductance on local change of the electric field, which can be induced by interaction of radiation with the underlying absorber substrate.