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Development of a New Power Transistor, Gtbt
Published October 20, 1998 by Society of Automotive Engineers of Japan in Japan
Event: JSAE Autumn Conference
A new power transistor, GTBT, having low conducting and switching losses has been invented and demonstrated. When GTBT is used for the PWM inverter circuit of an electric vehicle for example, calculations show that the power loss can be reduced by 40% compared with that of IGBTs. Furthermore, GTBT can be operated safely at high temperatures because it has no parasitic devices. The use of this power transistor will be expected to reduce the ability of cooling system for the power-head of an electric vehicle.