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Approaches to Obtain Tunable Diode Lasers for Air Monitoring Between 2 and 2.5 μm on InP
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Abstract
Alternative approaches for developing 2.0-2.5 μm single frequency semiconductor lasers are reviewed. Room temperature lasers in this wavelength range are important for the development of absorption spectroscopy instruments used in environmental monitoring and life support for space applications. In spite of significant efforts towards the growth and fabrication of lasers using the GaSb-based material system, room temperature, single frequency lasers in the 2-2.5 μm wavelength range are not yet available. As an alternative to the GaSb-based material system, novel techniques using the mature InP-based material system (which is potentially more suitable for single frequency laser fabrication) are being investigated. These include: highly strained InGaAs quantum well layers, graded buffer layers, laterally confined growth, and InGaAsN quantum well layers. In this paper, we will review the current status and limitations of these techniques to develop ambient temperature, single frequency lasers.
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Citation
Young, M., Forouchar, S., Keo, S., and Singletery, J., "Approaches to Obtain Tunable Diode Lasers for Air Monitoring Between 2 and 2.5 μm on InP," SAE Technical Paper 981566, 1998, https://doi.org/10.4271/981566.Also In
References
- Allen M.G. Kessler W.J. Sonnenfroh D.M. Proceedings of the International Conference on Environmental Systems Society of Automotive Engineers 972392 1997
- Lee H. York P.K. Menna R.J. Martinelli R.U. Garbuzov D.Z. Narayan S.Y. Connolly J.C. Appl. Phys. Lett. 66 1942 1944 1995
- Malin J.I. Felix C.L. Meyer J.R. Hoffman C.A. Pinto J.F. Lin C.H. Chang P.C. Murry S.J. Pei S.S. Elec. Lett. , 3 2 1593 - 1594 1996
- Mathews J.W. Blakeslee A. E. J. Cryst. Growth 27 118-1 24 1974
- Young M.G. Keo S.A. Forouhar S. Turner T. Davis L. Mueller R. Maker P.D. Proceedings of theLasers and Electro-Optics Society Annual' Meeting IEEE 1997
- Menna R.J. Martinelli R.U. Garbuzov D. Paff R. Vermaak J.S. Olsen G.H. Bonner W.A. Elec. Lett. 31 188 189 1995
- D'Hondt M. Moerman I. Demeester P. J. Cryst. Growth 170 616 620 1997
- Martinelli R.U. Zamerowski T.J. Longeway P.A. Appl. Phys. Lett. 54 277 279 1989
- Vescan L. Dieker C. Souifi A. Stoica T. J. Appl. Phys. 81 6709 6715 1997
- Guha S. Madhukar A. Chen L. Appl. Phys. Lett. 56 2304 2306 1990
- Madhukar A. Rajkumar K.C. Chen L. Guha S. Kaviani K. Kapre R. Appl. Phys. Lett. 57 2007 2009 1990
- Kondow M. Kitatani T. Nakatsuka S. Larson M.C. Nakahara K. Yazawa Y. Okai M. Uomi K. IEEE J. Select. Top. Quan. Elec. 3 719 729 1997