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Development of Lateral DMOS Using Process and Device Simulation
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English
Abstract
The lateral DMOS (LDMOS) had been developed for intelligent power IC[1][2] for ECU (Electric Control Unit). The process and device simulation methodology are used while developing a devices. The physical model and parameter in analytical model are calibrated to enhance the accuracy of the simulation and to reduce lead time and costs.
Authors
Citation
Shigematsu, K., Kamiya, T., Nakayama, Y., Higuchi, Y. et al., "Development of Lateral DMOS Using Process and Device Simulation," SAE Technical Paper 980800, 1998, https://doi.org/10.4271/980800.Also In
References
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