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Thermal Management Solutions to Advanced Integrated and Discrete Bipolar Junction (BJT) Device Structures
Technical Paper
2004-01-2572
ISSN: 0148-7191, e-ISSN: 2688-3627
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English
Abstract
The bipolar junction transistor (BJT) generates heat that can lead to thermal runaway. BJT temperature increases can affect how well this device performs. Moreover, integrated circuits (IC) consisting of large numbers of BJTs can have an adverse effect on how the device performs in aggregate. This paper discusses the BJT functionality and causes of heat generation and proposes potential solutions to this thermal problem.
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Citation
Ramsey, J., Jones, K., and Mitra, A., "Thermal Management Solutions to Advanced Integrated and Discrete Bipolar Junction (BJT) Device Structures," SAE Technical Paper 2004-01-2572, 2004, https://doi.org/10.4271/2004-01-2572.Also In
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