Double-Sided Si(Ge)/Sapphire/III-Nitride Hybrid Structures

  • Magazine Article
  • TBMG-34888
Published 2019-08-01 by Tech Briefs Media Group in United States
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  • English

NASA Langley Research Center has developed a double-sided Si(Ge)/ Sapphire/III-Nitride hybrid structure. This technology uses both sides of a sapphire wafer to build device structures — on one side, making either Si or SiGe devices and on the other side, making III-Nitride device structures (e.g. GaN, InGaN, AlGaN).