Back-Illuminated CCDs With Integral Ultraviolet-Pass Filters
- Magazine Article
- TBMG-29569
- English
Efforts are under way to develop back-surface-illuminated, thinned silicon charge-coupled devices (CCDs) with delta doping and integral optical filters to be used as image detectors in the ultraviolet wavelength range. The concept of delta doping of back-surface-illuminated, thinned silicon CCDs as part of an overall design to make CCDs sensitive to ultraviolet light is not new in itself. Delta-doped CCDs were invented at NASA's Jet Propulsion Laboratory in 1992, and it is well established that this process produces ultraviolet-sensitive CCDs with stable and uniform 100-percent internal quantum efficiency. The novelty lies in the proposed fabrication of such CCDs in which both delta doping and optical filter layers would be deposited as integral parts of unitary device structures.