Forward Voltage Short-Pulse Technique for Measuring High-Power Laser Diode Array Junction Temperature

  • Magazine Article
  • TBMG-28009
Published December 01, 2017 by Tech Briefs Media Group in United States
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  • English

NASA’s Langley Research Center has developed a new technology for measuring the junction temperature of laser diode arrays (LDAs) that can support dramatically improved LDA fault analysis and lifetime estimates. This technology provides better spatial and temporal resolution than spectral chirp or thermal imaging methods, and can be integrated into existing LDA systems, such as laser diode drivers, without significant additional costs (including weight, power, and space). Potential applications include quality control and screening of LDAs for maximum lifetime, optimizing development of operational parameters, or providing real-time operational diagnostics/prognostics.