Indium Tin Oxide Resistor-Based Nitric Oxide Microsensors
- Magazine Article
- TBMG-13237
Sector:
Language:
- English
A sensitive resistor-based NO microsensor, with a wide detection range and a low detection limit, has been developed. Semiconductor microfabrication techniques were used to create a sensor that has a simple, robust structure with a sensing area of 1.10 × 0.99 mm. A Pt interdigitated structure was used for the electrodes to maximize the sensor signal output. Ntype semiconductor indium tin oxide (ITO) thin film was sputter-deposited as a sensing material on the electrode surface, and between the electrode fingers. Alumina substrate (250 μm in thickness) was sequentially used for sensor fabrication.