Development of Fabrication Technology for MOS-Based Power Switching Devices in SiC
Published June 18, 1997 by SAE International in United States
Annotation of this paper is available
Power switching devices in the wide bandgap semiconductor silicon carbide (SiC) are under development in many laboratories in the United States, Europe, and Japan. Because SiC can be thermally oxidized to form SiO2, it is possible to construct MOS-based power devices such as power MOSFETs, IGBTs, and MCTs in this material. This paper outlines the technical challenges which must be overcome before MOS-based power switching devices in SiC can reach the commercial marketplace.