This content is not included in
your SAE MOBILUS subscription, or you are not logged in.
SiC Devices for Space Electronics: Phase I - High Voltage, Temperature Hard Contacts
Annotation ability available
Sector:
Language:
English
Abstract
High voltage Schottky diodes have been fabricated on 3C-SiC films grown on Si substrates. A Ni metallization process has been developed to fabricate both rectifying and ohmic contacts to SiC by controlling the post-annealing temperature. A high voltage (>150V) breakdown has been obtained at room temperature from the SiC Schottky diode. The Ni-SiC Schottky junction shows a thermal resistance for temperatures as high as 600°C. This technology has good potential for monolithic integration of SiC high power devices and Si integrated circuits.
Citation
Su, J. and Steckl, A., "SiC Devices for Space Electronics: Phase I - High Voltage, Temperature Hard Contacts," SAE Technical Paper 941227, 1994, https://doi.org/10.4271/941227.Also In
References
- Bhatnagar M. McLarty P. K. Baliga B. J. IEEE Electr. Dev. Lett. 13 501 Oct 92
- Kimoto T. Urushidani T. Kobayshi S. Matsunami H. IEEE Electr. Dev. Lett. 14 548 Dec 93
- Nishno S. Powell J. A. Will H. A. Appl. Phys. Lett. 42 460 83
- Powell J. A. Larkin D. J. Petit J. B. Edger J. H. 4th Intl. Conf. on SiC and Related Semiconductors Santa Clara, CA Oct 91
- Kim H. J. Davis R. F. J. Appl. Phys. 60 2897 86
- Matsunami H. Nishino S. Ono H. IEEE trans. Electron Devices ED-28 1253 81
- Neudeck P. G. Larkin D. J. Starr J. E. Powell J. A. Salupo C. S. IEEE Electr. Dev. Lett. 14 136 March 93
- Steckl A. J. Li J. P. IEEE Trans. Electr. Dev. 39 64 Jan 92
- Li J. P. Steckl A. J. MRS Proc. 280 93
- Steckl A. J. Yuan C. Li J. P. Loboda M. J.. 5th Intl Conf. on SiC and Related Semiconductors Wash., DC Nov 93
- Papanicolau N. A. Christou A. Gipe M. L.. J. Appl. Phys. 65 3526 May 89
- Su J. N. Steckl A. J. Moor R.