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SOI Type Pressure Sensor for High Temperature Pressure Measurement
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Abstract
An SOI type pressure sensor has been developed which can measure pressure at high temperature environments above 150°C.
SOI stands for Silicon On Insulator. A single-crystalline silicon layer is located on an insulating layer formed on a silicon substrate. The piezoresistors of the SOI type pressure sensor are made from the single-crystalline silicon layer which is isolated from the silicon substrate by the insulating layer. There is no leakage current from the piezoresistors. The SOI structure is made by the laser-recrystallization-method.
The properties of the SOI type pressure senor are as good as conventional semiconductor pressure sensors.
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Citation
Hase, Y., Bessho, M., and Ipposhi, T., "SOI Type Pressure Sensor for High Temperature Pressure Measurement," SAE Technical Paper 940634, 1994, https://doi.org/10.4271/940634.Also In
References
- Fukazawa T. Mizukoshi M. Asai A. Hara K. High-Temperature Semiconductor Pressure Sensor for Automobile SAE No. 860473
- Suski J. Mosser V. Goss J. Polysilicon SOI Pressure Sensor, Sensor and Actuators 17 1989 405 414
- Chung G. S. Kawahito S. Ashiki M. Ishida M. Nakamura T. Novel High-performance Pressure Sensor Using Double SOI Structure Transducers '91 Digest of technical papers 1991 676 681
- French P. J. Muro H. Shinohara T. Nojiri H. Kaneko H. SOI Pressure Sensor, Sensors and Actuators A35 1992 17 22
- Petersen K. Brown J. Vermeulen T. Mallon, J. J.R. Bryzek J. Ultra-Stable, High-Temperature Pressure Sensors Using Silicon Fusion Bonding Sensors and Actuators A21-A23 1990 96 101
- Givargizov E. I. Limanov A. B. Prijakin G. D. Vaganov V. I. Silicon-on-Insulator (SOI) Structure for Pressure Sensor Sensors and Actuators A28 1990 96 101
- Diern B. Truche R. Viollet-Bosson S. Delapierre G. ‘SIMOX’ (Separation by Ion Implantation of Oxygen): a Technology for High-temperature Silicon Sensors Sensors and Actuators A21-A23 1990 1003 1006
- Sugahara K. Kusunoki S. Inoue Y. Nishimura T. Akasaka Y. Orientation Control of the Silicon Film on Insulator by Laser Recrystallization Jounal of Applied Physics 62 10 1987 4178 4181