This content is not included in
your SAE MOBILUS subscription, or you are not logged in.
Silicon Semiconductor Pressure Sensor for High Pressure Use
Annotation ability available
Sector:
Language:
English
Abstract
This paper will introduce a new type of high pressure sensor. In this kind of sensor, an active surface silicon sensing chip is utilized on which strain gages are fabricated, the active surface is mounted on and bonded to a glass die by anodic bonding. Pressure is applied to the opposite side of the active surface. With this type of sensor we were able to exclude a seal diaphragm and the costly oil filled process which are commonly used in high pressure sensors. We were able to achieve a pressure measurement up to 200 kgf/cm2 within an error of 0.6% non linearity. This paper describes the optimum design and characteristics of this pressure sensor.
Recommended Content
Technical Paper | Photo Sensor for Glass Primer Application When Bonding Windshield |
Technical Paper | A Hall Effect Rotary Position Sensor |
Technical Paper | Design of a High-Temperature Utility Electromechanical Actuator |
Authors
Citation
Mizukoshi, M., Kawasaki, E., Miyajima, T., and Hara, K., "Silicon Semiconductor Pressure Sensor for High Pressure Use," SAE Technical Paper 880412, 1988, https://doi.org/10.4271/880412.Also In
References
- Shimada S. Nishihara M. Yamada K. Murayama K. Ichikawa N. Kumazawa T. “Oil Filled Type High Pressure Sensor Using a Silicon Diaphragm.” IEEE IECON'84 Technical Papers 782 785 1984
- Fukazawa T. Mizukoshi M. Asai A. Hara K. “High Temperature Semiconductor Pressure Sensor for Automobiles.” SAE International Congress and Exposition'86 SAE Paper 860473 1986