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Self-Thermal Protecting Power MOSFETs
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English
Abstract
A power MOSFET which cuts off current surges itself at critical high temperatures and never breaks or fails thermally has been developed. The thermal sensors consist of PN junction diodes built into the polysilicon layers on the oxides of conventional DMOSFETs.
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Citation
Yamaoka, M., Tsuzuki, Y., and Kawamoto, K., "Self-Thermal Protecting Power MOSFETs," SAE Technical Paper 880411, 1988, https://doi.org/10.4271/880411.Also In
References
- Wrathall Robert S. “The design of a high power solid state automotive switch in CMOS-VDMOS technology,” IEEE Power Electronics Specialists Conference 229 233 June 1985
- Einzinger, J. Leipold, L. Tihanyi, J. Weber, R. “Monolithic IC Power Switch for Automotive Applications” IEEE International Solid State Circuits Conference February 1986