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Thin Film Semiconductor NO x Sensor
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English
Abstract
In direct contact with untreated, undiluted exhaust gases, the resistance of the thin film semiconductor tin oxide NOx sensor (TFS sensor) shows strong dependence on engine air-to-fuel ratio (A/F). The peak resistance of the sensor occurs around 17–18 A/F. From frequency response tests, the sensor response time constant is estimated to be ~1.1 seconds. A chemiluminiscent NOx analyzer (CLA) is used to measure the NO and NOx concentrations in the exhaust gases, while the NO2 content is estimated from [NOx] - [NO] measurements. Peak concentrations of NO and NO2 occur at 15 A/F and 17–18 A/F, respectively. The NO2 peak position is very close to the sensor resistance peak position. While EGR drastically reduces the NO content, it shows a smaller effect on the sensor resistance, especially around the stoichiometric condition.
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Chang, S., "Thin Film Semiconductor NOx Sensor," SAE Technical Paper 800537, 1980, https://doi.org/10.4271/800537.Also In
References
- Maahs, H. G. NASA 1975
- Troxel, L. 1979
- Hilliard J. C. Wheeler, R. W. Comb and Flame 29 15 1977
- Hilliard J. C. Wheeler, R. W. Ricardo
- Chang, S. C. 1979
- Agnew, W. G. Proc. Roy. Soc. A. 307 153 1968
- Wei, J. Advan. Catal 24 57 1975
- Hauffe, K. Advan. Catal. 7 213 1955
- Stone, F. S. Advan. Catal. 13 1 1962
- Quadar, A. A. SAE Transactions 80 1971 Paper 710009
- Kaneko, Y. Kobayashi H. Komagome, R. SAE Progress 1975