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Residual Stresses in Steel Parts and Single Crystal Silicon
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English
Abstract
Examples are given of the heat treatment residual stress and retained austenite distributions in a carburized part, and the residual stress after grinding in another hardened part. Stress fields around dislocations in silicon wafers due to processing are shown by X-ray topographs, illustrating that residual stresses are also of concern in other materials.
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Citation
Pearson, D., "Residual Stresses in Steel Parts and Single Crystal Silicon," SAE Technical Paper 710282, 1971, https://doi.org/10.4271/710282.Also In
References
- Koistinen D. P. “The Distribution of Residual Stresses in Carburized Cases and Their Origin.” Trans of ASM 50 1958
- Blech I. A. Guyaux J. Cooper G. “High Temperature Camera for X-ray Topography.” Review of Scientific Instruments 38 5 May 1967