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Design and Evaluation of a Novel Hybrid SiC-GaN Based Bidirectional Full-Bridge DC-DC Converter
Technical Paper
2017-01-2032
ISSN: 0148-7191, e-ISSN: 2688-3627
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English
Abstract
Efficient, small, and reliable dc-dc power converters with high power density are highly desirable in applications such as aerospace and electric vehicles, where battery storage is limited. Bidirectional full-bridge (FB) dc-dc converters are very popular in medium and high-power applications requiring regenerative capabilities. Full-bridge topology has several advantages such as:
- Inherent galvanic isolation between input and output as well as high conversion ratio due to the transformer with a turns ratio n.
- Reduction in passive component sizes due to the increase in inductor current frequency to twice the switching frequency.
- Reduced voltage stresses on the low-voltage side switches and current stresses on the high-voltage side switches.
However, due to the high number of switches, device losses increase. Use of wide-band gap (WBG) devices, such as Silicon Carbide (SiC) and Gallium Nitride (GaN) devices, in power electronic converters has shown to reduce device losses and need for extensive thermal management systems in power converters. SiC and GaN have complementary properties. SiC devices offer superior thermal performance due to their high thermal conductivity and GaN devices offer superior switching performance due to their high carrier mobility. However, state-of-the-art commercially available GaN devices can only withstand breakdown voltages up to 650 V, while SiC devices can handle up to 1700 V. Because of this shortcoming, GaN devices cannot be used in power converters for high voltage applications, despite GaN’s capability to operate at high switching frequencies with high efficiency. This work aims to exploit both the high-voltage capability of SiC devices and exceptional switching capability of GaN devices in a novel hybrid SiC-GaN based bidirectional full-bridge dc-dc converter with improved efficiency, reliability, and power density for high power applications. The proposed bidirectional converter rated at 5 kW will be designed and simulation results obtained using LT Spice circuit simulator will be presented.
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Kondrath, N., "Design and Evaluation of a Novel Hybrid SiC-GaN Based Bidirectional Full-Bridge DC-DC Converter," SAE Technical Paper 2017-01-2032, 2017, https://doi.org/10.4271/2017-01-2032.Data Sets - Support Documents
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References
- Kondrath , N. and Smith , N. An investigation into the tradespace of advanced wide-band gap semiconductor devices in a full-bridge dc-dc converter SAE Int. J. Aerosp. 9 1 37 44 2016 10.4271/2016-01-1990
- Acharya , K. , Mazumder , S. K. , and Jedraszczak , P. Efficient, high temperature bidirectional dc/dc converter for plug-in-hybrid electric vehicle (PHEV) using SiC devices Proc. IEEE Applied Power Electron. Conf. (APEC) Feb. 2009 Washington D.C., USA 642 648
- Graovac , D. , Christmann , A. , and Münzer , M. Power semiconductors for hybrid and electric vehicles Proc. ECCE 2011
- Inoue , S. , and Akagi , H. A bidirectional dc-dc converter for an energy storage system with galvanic isolation IEEE Trans. Power Electron. 22 6 2299 2306 2007
- Pittini R. et al. Isolated full-bridge boost dc-dc converter designed for bidirectional operation of fuel cells/electrolyzer cells in grid-tie applications EPE 2013
- Kazimierczuk , M. K. Pulse-width modulated dc-dc power converters John Wiley & Sons Chichester, UK 2nd 2008
- Cavallo A. et al. Boost Full Bridge Bidirectional DC/DC Converter for Supervised Aeronautical Applications Int. Journal of Aerospace Engineering 2014
- Kondrath , N. and Kazimierczuk , M. K. Characteristics and applications of silicon carbide power devices in power electronics International Journal of Electronics and Telecommunications 56 3 231 236 Sept. 2010
- Millan , J. , and Godignon , P. Wide band gap power semiconductor devices Spanish Conference on Electron. Devices 2013 293 296
- Mao , S. , Ramabhadran , R. , Popovic , J. , and Ferreira , J. A. Wide band gap power semiconductor devices IEEE Energy Conversion Congress and Exposition (ECCE) 2013 293 296
- Department of defense interface standard - aircraft electric power characteristics March 2004
- May 10 2015
- May 10 2015