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High Current (>1000A), High Temperature (>200°C) Silicon Carbide Trench MOSFET (TMOS) Power Modules for High Performance Systems

Journal Article
2012-01-2209
ISSN: 1946-4614, e-ISSN: 1946-4622
Published October 22, 2012 by SAE International in United States
High Current (>1000A), High Temperature (>200°C) Silicon Carbide Trench MOSFET (TMOS) Power Modules for High Performance Systems
Sector:
Citation: McPherson, B., Shaw, R., Hornberger, J., Lostetter, A. et al., "High Current (>1000A), High Temperature (>200°C) Silicon Carbide Trench MOSFET (TMOS) Power Modules for High Performance Systems," SAE Int. J. Passeng. Cars – Electron. Electr. Syst. 6(1):10-17, 2013, https://doi.org/10.4271/2012-01-2209.
Language: English

References

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