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Development of a High Temperature Power Module Technology with SiC Devices for High Density Power Electronics
Technical Paper
2011-01-2620
ISSN: 0148-7191, e-ISSN: 2688-3627
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English
Abstract
This paper presents the development of a high density packaging
technology for wide band gap power devices, such as silicon carbide
(SiC). These devices are interesting candidates for the next
aircraft power electronic converters. Effectively they achieve high
switching frequencies thanks to the low losses level. High
switching frequencies lead to reduce the passive components size
and to an overall weight reduction of power converters.
Moreover, SiC devices may enable operation at junction
temperatures around 250°C. The cooling requirement is much less
stringent than for usual Si devices. This might considerably
simplify the cooling system, and reduce the overall weight.
To achieve the integration requirements for SiC devices,
classical wire bonding interconnection is replaced by a stacked
packaging using bump interconnection technologies, called sandwich.
These technologies offer two thermal paths to drain heat out and
present more power integration possibilities.
To make reliable sandwich packaging, high temperature solder
alloys using low temperature processes are evaluated. Among these
assembly techniques, there are the Transient Liquid Phase bonding
with Au-Sn solder alloy and the nanopaste silver sintering
technique. These techniques are studied as solder assembly
solutions to ensure the die-attach and the bumps interconnects.
Therefore, the thermo-mechanical behavior of sandwich packaging
using silver sintering process and various bump configurations were
evaluated under a thermal cycling profile between -40°C and +185°C
by means of numerical simulation. Finally, the design optimization
of these high temperature packaging technologies is pointed
out.
Authors
Citation
Cissé, A., Massiot, G., Munier, C., Vidal, P. et al., "Development of a High Temperature Power Module Technology with SiC Devices for High Density Power Electronics," SAE Technical Paper 2011-01-2620, 2011, https://doi.org/10.4271/2011-01-2620.Also In
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