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4H-SiC VJFET Based Normally-off Cascode Switches for 300°C Electronic Applications
- Victor Veliadis - Northrop Grumman Electronic Systems ,
- Harold Hearne - Northrop Grumman Electronic Systems ,
- Ty McNutt - Northrop Grumman Electronic Systems ,
- Megan Snook - Northrop Grumman Electronic Systems ,
- Paul Potyraj - Northrop Grumman Electronic Systems ,
- Aivars Lelis - U.S. Army Research Laboratory ,
- Charles Scozzie - U.S. Army Research Laboratory
Journal Article
2008-01-2883
ISSN: 1946-3855, e-ISSN: 1946-3901
Sector:
Event:
Power Systems Conference
Citation:
Veliadis, V., Hearne, H., McNutt, T., Snook, M. et al., "4H-SiC VJFET Based Normally-off Cascode Switches for 300°C Electronic Applications," SAE Int. J. Aerosp. 1(1):973-981, 2009, https://doi.org/10.4271/2008-01-2883.
Language:
English
Abstract:
Vertical-Junction-Field-Effect-Transistors (VJFETs) are currently the most mature SiC devices for high power/temperature switching. High-voltage VJFETs are typically designed normally-on to ensure voltage control operation at high current-gain. However, to exploit the high voltage/temperature capabilities of VJFETs in a normally-off high-current voltage-controlled switch, high-voltage normally-on and low-voltage normally-off VJFETs were connected in the cascode configuration. In this paper, we review the high temperature DC characteristics of VJFETs and 1200 V normally-off cascode switches. The measured parameter shifts in the 25°C to 300°C temperature range are in excellent agreement with theory, confirming fabrication of robust SiC VJFETs and cascode switches.