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4H-SiC VJFET Based Normally-off Cascode Switches for 300°C Electronic Applications

Journal Article
2008-01-2883
ISSN: 1946-3855, e-ISSN: 1946-3901
Published November 11, 2008 by SAE International in United States
4H-SiC VJFET Based Normally-off Cascode Switches for 300°C Electronic Applications
Sector:
Citation: Veliadis, V., Hearne, H., McNutt, T., Snook, M. et al., "4H-SiC VJFET Based Normally-off Cascode Switches for 300°C Electronic Applications," SAE Int. J. Aerosp. 1(1):973-981, 2009, https://doi.org/10.4271/2008-01-2883.
Language: English

Abstract:

Vertical-Junction-Field-Effect-Transistors (VJFETs) are currently the most mature SiC devices for high power/temperature switching. High-voltage VJFETs are typically designed normally-on to ensure voltage control operation at high current-gain. However, to exploit the high voltage/temperature capabilities of VJFETs in a normally-off high-current voltage-controlled switch, high-voltage normally-on and low-voltage normally-off VJFETs were connected in the cascode configuration. In this paper, we review the high temperature DC characteristics of VJFETs and 1200 V normally-off cascode switches. The measured parameter shifts in the 25°C to 300°C temperature range are in excellent agreement with theory, confirming fabrication of robust SiC VJFETs and cascode switches.