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Customized Power MOSFETs for Automotive Application
Technical Paper
2007-01-1590
ISSN: 0148-7191, e-ISSN: 2688-3627
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English
Abstract
This paper describes the customized power MOSFET technologies that we have developed over the last twenty years for automotive use. During the 1980s we developed thermal-destruction free power MOSFETs with monolithically integrated polysilicon thermal sensing diodes (PTSDs), which are in wide use around the world. In the 1990s, we succeeded in developing the CONCAVE-DMOSFET, the first vertical channel power MOSFET for automotive use that achieves both lower dissipation and optimal gate reliability.
Recently, we have greatly advanced power MOSFET performance through the development of PTOx trench-gate MOSFETs (TMOSs), where PTOx stands for partially thick gate oxide film structure. The PTOx structure consists of thick oxide around the trench top, thin oxide on the trench sides, and thick oxide at the trench bottom, and is formed using a simple process that we developed. Estimated figures of merit (Ron*Qgd) compared with conventional devices are remarkably reduced by 32% at 60 V, 28% at 100 V, and 25% at 250 V. Fabricated PTOx-TMOSs of 100 V and 250 V denote high performance corresponding with the estimations, and stress reduction in the gate oxides against high electrical field has been successfully achieved, promising high reliability.
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Mizuno, S., Aoki, T., Tsuzuki, Y., and Suzuki, M., "Customized Power MOSFETs for Automotive Application," SAE Technical Paper 2007-01-1590, 2007, https://doi.org/10.4271/2007-01-1590.Also In
References
- Tsuzuki Y. et al. “SELF-THERMAL PROTECTING POWER MOSFETs” Proceedings OF THE 18th ANNUAL IEEE POWER ELECTRONICS SPECIALIST CONFERENCE 1987
- Tokura et al. “DMOS Consisting of Channel Region Defined by LOCOS (LOCOS-DMOS): A New Process/Device Technology for Low On-Resistance Power MOSFET” Proceedings of THE 5TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICs 1993
- Tokura et al. “CONCAVE-DMOSFET: A New Super-low On-resistance Power MOSFET” Jpn. J. Appl. Phys. 34 1995 903 908
- Aoki Takaaki et al. “High Performance and Reliability Trench-Gate Power MOSFET With Partially Thick Gate Oxide Film Structure (PTOx-TMOS)” Proc. ISPSD ( 2006 85 88