This content is not included in
your SAE MOBILUS subscription, or you are not logged in.
High Temperature Packaging and Pulse Testing of Parallel SiC Thyristors
Technical Paper
2006-01-3106
ISSN: 0148-7191, e-ISSN: 2688-3627
Annotation ability available
Sector:
Event:
Power Systems Conference
Language:
English
Abstract
For fast rise time, high peak current pulse power applications, Silicon Carbide (SiC) is ideal due to its ability to tolerate high localized temperatures generated during switching. Several 4 mm × 4 mm SiC Gate Turn-Off thyristors (GTOs) manufactured by CREE were evaluated. Testing for individual and paired devices was performed under both single and repetitive pulsing using variable pulse duration, ring-down capacitor discharge circuit. At 150 °C, maximum single shot currents as high as 3.2 kA have been shown for single devices at a 50% pulse width of 2 μsec while parallel devices have shown a maximum of 4.4 kA at 150 °C.
Authors
Topic
Citation
Geil, B., Bayne, S., and O'Brien, H., "High Temperature Packaging and Pulse Testing of Parallel SiC Thyristors," SAE Technical Paper 2006-01-3106, 2006, https://doi.org/10.4271/2006-01-3106.Also In
References
- Ryu S. H. Agarwal A. K. Singh R. Palmour J. W. “3100 V, Asymmetrical, Gate Turn-Off (GTO) Thyristors in 4H-SiC,” IEEE Electron Device Letters 22 127 129 2001
- Mohan N. Undeland T. Robbins W. Power Electronics Converters, Applications, and Design New York: Wiley 1995 596 609
- Geil B. Ibitayo D. Bayne S. Koebke M. “Thermal and Electrical Evaluation of SiC GTOS for Pulsed Power Applications,” Plasma Science, IEEE Transactions on 33 4 Aug. 2005 1226 1234
- O'Brien H. Shaheen W. Bayne S. B. “Pulsed Power Switching of a 4 mm × 4 mm SiC Thyristor,” 15th IEEE International Pulsed Power Conference June 13-17 2005
- O'Brien H. Shaheen W. Bayne S. B. “Evaluation of a 4 mm × 4 mm SiC GTO at Temperatures up to 150 °C and Varying Pulse Width,” 27th IEEE International Power Modulator Symposium May 14-18 2006
- Geil B. R. Bayne S. B. Ibitayo D. Koebke M. G. “Thermal and Electrical Evaluation of SiC GTOs for Pulsed Power Applications,” IEEE Transactions on Plasma Science 33 2005 1226 1234