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Semiconductors Compound Films with Optoeletronic Appliqued
Technical Paper
2005-01-4090
ISSN: 0148-7191, e-ISSN: 2688-3627
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English
Abstract
The project has as objective to make the system of epitaxial growth Hot Wall Beam Epitaxy (HWBE) enter in operation for the attainment of composites semiconductors IV-VI family crystalline films, over Barium Fluoride (BaF2) substrates. The advantage in the use of BaF2 as substrate is its good marriage of the crystallographic arrangement with the film composites used, that are: Lead Telluride (PbTe) and Lead Telluride with Tin (PbSnTe), chosen because they possess optic properties and mainly the energy of the forbidden band (Eg) narrow. It can thus be used as P-N junctions, which are the infrared detectors that work with the wavelength (λ) range - 5 μm < λ < 14 μm.
Authors
Citation
Renosto, S. and Guimarães, S., "Semiconductors Compound Films with Optoeletronic Appliqued," SAE Technical Paper 2005-01-4090, 2005, https://doi.org/10.4271/2005-01-4090.Also In
References
- Jacobs G. J. Barbosa L.C. Cesar C. L. Unicamp PbTe quantum dots in tellurite glasses: linear and non-linear properties XXVI Condensed Physics National Meeting 2003
- Boschetti C. Fabricaçção de fotocondutores de Pb 1-x Sn x Te 1983
- Rappl P. H. O. Closs H. Ferreira S. O. Abramof E. Boschetti C. Motisuke P. Ueta A. Y. Bandeira I. N. Molecular beam epitaxial growth of high quality Pb 1-x Sn x Te layers with 0 £ x £ 1 Journal of Crystal Growth 191 466 471 1998
- Bandeira, I. N. Dispositivos optoeletrônicos para o infravermelho termal 1994
- Kovalchik T. L. Maslakovets Iu. P. Sov. Phys. Technology Phys. 1957
- Borisova L. D. Phys. State Solid 1979
- Rustomov P. G. Alidzhanor M. A. Abilov C. H. I. Phys. State. Solid. 1972
- Guimarães S. da Silva Sabrina de C. F. de Assis João M. K. Comparison Between Epitaxial Layers grown by Hot Wall Epitaxy and Flash Evaporation Acta Microscopica 12 2003
- Herman M.A. Sitter H. Molecular Beam Epitaxy New York Springer 1996
- Belenchuk A. Fedorov A. Huhtinen H. Kantser V. Laiho R. Shapoval O. Zakhvalinskii V. Growth of (111)-oriented PbTe Flms on Si(001) using a BaF2 buffer Thin Solid Films 358 2000
- Chishko V. F. Dirochka A. I. Kasatkin I. L. Moisseenko A. G. Vasil'kov V.N. Photoelectric properties of Pb 1-x-y Ge x Sn y Te:In, thin films on Si+SiO 2 Substrates The 16-th Inernational scientific-and-technical conference on photoelectronics and night vision devices Moscow, Russia 2000
- Dalven R. A. Review of the semiconductors properties of PbTe, PbSe, PbS and PbO Infrared Physics 9 141 184 1969
- Kittel Charles Introdução à Física do Estado Sólido a 1978
- Boschetti C. Rappl P. H. O. Ueta A. Y. Bandeira I. N. Growth of narrow gap epilayers and p-n junctions on silicon for infrared detectors arrays Infrared Phys. 34 3 281 287 1993
- Rogalski A. Infrared Phys . 1988